Exploring the Impact of Negative Bias Temperature Instability in SiGe p-MOSFETs Utilizing a Two-Stage Model

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Exploring the Impact of Negative Bias Temperature Instability in SiGe p-MOSFETs Utilizing a Two-Stage Model

In recent years, Negative Bias Temperature Instability (NBTI) has emerged as a significant reliability concern for Metal-Oxide-Semiconductor (MOS) devices. NBTI leads to the accumulation of interface traps (Nit) and/or positive oxide traps (Not) in the Si/SiO2 interface and bulk gate insulators. The...

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Bibliographic Details
Published in:	Malaysian Journal of Chemistry
Main Author:	Azman N.S.B.; Hadi M.F.A.; Hussin H.; Mohamed A.H.; Yusoff M.Z.M.
Format:	Article
Language:	English
Published:	Malaysian Institute of Chemistry 2024
Online Access:	https://www.scopus.com/inward/record.uri?eid=2-s2.0-85206162498&doi=10.55373%2fmjchem.v26i5.306&partnerID=40&md5=100341a0aa4789e7151737b96ea9d390

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