Exploring the Impact of Negative Bias Temperature Instability in SiGe p-MOSFETs Utilizing a Two-Stage Model
In recent years, Negative Bias Temperature Instability (NBTI) has emerged as a significant reliability concern for Metal-Oxide-Semiconductor (MOS) devices. NBTI leads to the accumulation of interface traps (Nit) and/or positive oxide traps (Not) in the Si/SiO2 interface and bulk gate insulators. The...
| Published in: | Malaysian Journal of Chemistry |
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| Main Author: | |
| Format: | Article |
| Language: | English |
| Published: |
Malaysian Institute of Chemistry
2024
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| Online Access: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85206162498&doi=10.55373%2fmjchem.v26i5.306&partnerID=40&md5=100341a0aa4789e7151737b96ea9d390 |