Exploring the Impact of Negative Bias Temperature Instability in SiGe p-MOSFETs Utilizing a Two-Stage Model

• Published in: Malaysian Journal of Chemistry
• Main Author: Azman N.S.B.; Hadi M.F.A.; Hussin H.; Mohamed A.H.; Yusoff M.Z.M.
• Format: Article
• Language: English
• Published: Malaysian Institute of Chemistry 2024
• Online Access: https://www.scopus.com/inward/record.uri?eid=2-s2.0-85206162498&doi=10.55373%2fmjchem.v26i5.306&partnerID=40&md5=100341a0aa4789e7151737b96ea9d390

In recent years, Negative Bias Temperature Instability (NBTI) has emerged as a significant reliability concern for Metal-Oxide-Semiconductor (MOS) devices. NBTI leads to the accumulation of interface traps (Nit) and/or positive oxide traps (Not) in the Si/SiO2 interface and bulk gate insulators. These defects contribute to device degradation, thereby diminishing the performance of Complementary Metal-Oxide-Semiconductor (CMOS) circuits. This project aims to investigate the characteristics of the Id/Vgs Silicon Germanium (SiGe) p-type Metal Oxide Semiconductor Field Effect Transistor (p-MOSFET) device in response to NBTI effects using two-stage model. The study delves into the impact of NBTI concerning the percentage of Germanium (Ge) concentration in the SiGe p-MOSFET device. Furthermore, the investigation explores variations in stress conditions, encompassing stress temperatures, stress and relaxation times, and stress gate voltages (Vgs). The research utilized Silvaco Technology Computer Aided Design (TCAD) TOOLS, employing Athena as a process simulator and Atlas as a device simulator. The simulation results reveal a discernible trend of increasing degradation in terms of drain current (Id) and threshold voltage (Vth) shift as the percentage of Ge, stress temperature, stress voltage, and stress time are elevated. This suggests that optimizing the percentage of Ge has the potential to ameliorate the reliability effects of NBTI. © 2024 Malaysian Institute of Chemistry. All rights reserved.