Enhanced Breakdown Voltage of AlGaN/GaN MISHEMT using GaN Buffer with Carbon-Doping on Silicon for Power Device

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Enhanced Breakdown Voltage of AlGaN/GaN MISHEMT using GaN Buffer with Carbon-Doping on Silicon for Power Device

In recent years, Gallium Nitride (GaN)-based metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) have attracted interest in high-power and high-frequency applications. The breakdown mechanism in E-mode GaN MISHEMTs with carbon doping in the GaN buffer grown on a Silicon (Si)...

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Bibliographic Details
Published in:	International Journal of Nanoelectronics and Materials
Main Author:	Islam N.; Mohamed M.F.P.; Rahman S.F.A.; Syamsul M.; Kawarada H.; Rahim A.F.A.
Format:	Article
Language:	English
Published:	Universiti Malaysia Perlis 2024
Online Access:	https://www.scopus.com/inward/record.uri?eid=2-s2.0-85195122596&doi=10.58915%2fijneam.v17i2.684&partnerID=40&md5=989b6677d6649ad03e3282f22561c7a3

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