Enhanced Breakdown Voltage of AlGaN/GaN MISHEMT using GaN Buffer with Carbon-Doping on Silicon for Power Device
In recent years, Gallium Nitride (GaN)-based metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) have attracted interest in high-power and high-frequency applications. The breakdown mechanism in E-mode GaN MISHEMTs with carbon doping in the GaN buffer grown on a Silicon (Si)...
| Published in: | International Journal of Nanoelectronics and Materials |
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| Main Author: | |
| Format: | Article |
| Language: | English |
| Published: |
Universiti Malaysia Perlis
2024
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| Online Access: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85195122596&doi=10.58915%2fijneam.v17i2.684&partnerID=40&md5=989b6677d6649ad03e3282f22561c7a3 |