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Islam N.; Mohamed M.F.P.; Rahman S.F.A.; Syamsul M.; Kawarada H.; Rahim A.F.A.
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Islam N.; Mohamed M.F.P.; Rahman S.F.A.; Syamsul M.; Kawarada H.; Rahim A.F.A.
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Enhanced Breakdown Voltage of AlGaN/GaN MISHEMT using GaN Buffer with Carbon-Doping on Silicon for Power Device
by
Islam
N
.;
Mohamed
M.F.P
.;
Rahman
S.
F.A
.;
Syamsul
M
.;
Kawarada
H
.;
Rahim
A.F.A
.
Published in
International Journal of Nanoelectronics and Materials
(2024)
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