Enhanced Breakdown Voltage of AlGaN/GaN MISHEMT using GaN Buffer with Carbon-Doping on Silicon for Power Device

• Published in: International Journal of Nanoelectronics and Materials
• Main Author: Islam N.; Mohamed M.F.P.; Rahman S.F.A.; Syamsul M.; Kawarada H.; Rahim A.F.A.
• Format: Article
• Language: English
• Published: Universiti Malaysia Perlis 2024
• Online Access: https://www.scopus.com/inward/record.uri?eid=2-s2.0-85195122596&doi=10.58915%2fijneam.v17i2.684&partnerID=40&md5=989b6677d6649ad03e3282f22561c7a3

In recent years, Gallium Nitride (GaN)-based metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) have attracted interest in high-power and high-frequency applications. The breakdown mechanism in E-mode GaN MISHEMTs with carbon doping in the GaN buffer grown on a Silicon (Si) substrate (Sub) was investigated using technology computer-aided design simulations. Results showed that GaN MISHEMTs without Si Sub had a breakdown voltage (BV) of 600 V. However, after adding Si Sub to the GaN buffer layer, the electric field (EF) increased, creating a vertical breakdown through the total buffer thickness, therefore, BV was reduced to around 240 V. On the other hand, BV is increased to approximately >1100 V, and the Electric field is reduced after employing a carbon deep acceptor with the proper doping concentration in this device. The GaN MISHEMTs with Si Sub is presented as threshold voltage +1.5 V with transconductance of 700 mS/mm, which is an excellent result compared to GaN MISHEMTs without Si Sub. Eventually, the study device depicted higher BV performance compared to other C-doped GaN HEMT devices. This suggests that the designed GaN MISHEMTs device could effectively be used in power semiconductor devices with optimum performance. © 2024, Universiti Malaysia Perlis. All rights reserved.