| Summary: | The aim of the paper is to study a distribution of ions inside a zinc oxide (ZnO) target during sputtering process using different gases. The plots of ion distribution were obtained from the simulation results using Stopping and Range of Ions in Matter (SRIM)-2013 software. Generally, the SRIM software is utilized to calculate a variety of parameters related to ion beam implantation and ion beam processing of materials. Simulation of ion beam sputtering is a necessary to analyze the ionization characteristics of different ions from different gases inside ZnO target during sputtering process for a thin film deposition. The results show that Radon, Krypton, and Xenon gases were the best gases to sputter high density of ZnO target in this simulation. The depth of ion during sputtering process is shown and discussed. The result indicates that depth of ion diffused into the target material decrease as the density of the target increases. These results are important to find suitable gases for ZnO sputtering and at the same time prolonging the target lifespan. © 2022, The Author(s), under exclusive license to Springer Nature Singapore Pte Ltd.
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