Reliability Analysis of Multibridge Channel Field Effect Transistor

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Reliability Analysis of Multibridge Channel Field Effect Transistor

In this paper, reliability studies of Positive Bias Temperature Instability (PBTI) characteristics in n-channel MBCFETs and Negative Bias Temperature Instability (NBTI) in p-channel MBCFETs are conducted. Similar to NBTI, PBTI is also a significant reliability issue in transistors. An analytical stu...

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Bibliographic Details
Published in:	2024 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, ICSE
Main Authors:	Ganlin, Huang; Alias, N. Ezaila; Tan, M. L. Peng; Hamzah, M. N.; Wahab, Yasmin Abdul; Hussin, Hanim
Format:	Proceedings Paper
Language:	English
Published:	IEEE 2024
Subjects:	Engineering
Online Access:	https://www-webofscience-com.uitm.idm.oclc.org/wos/woscc/full-record/WOS:001329134600009

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