Reliability Analysis of Multibridge Channel Field Effect Transistor
In this paper, reliability studies of Positive Bias Temperature Instability (PBTI) characteristics in n-channel MBCFETs and Negative Bias Temperature Instability (NBTI) in p-channel MBCFETs are conducted. Similar to NBTI, PBTI is also a significant reliability issue in transistors. An analytical stu...
| Published in: | 2024 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, ICSE |
|---|---|
| Main Authors: | , , , , , , |
| Format: | Proceedings Paper |
| Language: | English |
| Published: |
IEEE
2024
|
| Subjects: | |
| Online Access: | https://www-webofscience-com.uitm.idm.oclc.org/wos/woscc/full-record/WOS:001329134600009 |