Reliability Analysis of Multibridge Channel Field Effect Transistor

• Published in: 2024 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, ICSE
• Main Authors: Ganlin, Huang; Alias, N. Ezaila; Tan, M. L. Peng; Hamzah, M. N.; Wahab, Yasmin Abdul; Hussin, Hanim
• Format: Proceedings Paper
• Language: English
• Published: IEEE 2024
• Subjects: Engineering
• Online Access: https://www-webofscience-com.uitm.idm.oclc.org/wos/woscc/full-record/WOS:001329134600009

In this paper, reliability studies of Positive Bias Temperature Instability (PBTI) characteristics in n-channel MBCFETs and Negative Bias Temperature Instability (NBTI) in p-channel MBCFETs are conducted. Similar to NBTI, PBTI is also a significant reliability issue in transistors. An analytical study of MBCFET concerning the degradation/shifting and recovery of threshold voltage (Delta V-th) and on-current (Delta I-on) by varying different device parameters such as channel length, stress voltage, and stress time was carried out before and after stress application. This project aims to provide extensive data on the degradation mechanism of PBTI and NBTI in MBCFETs. This is achieved by simulating the 12nm MBCFET's device structure and applying stress tests on the proposed device. Several sets of stress voltages ranging from -2 to -5V are applied to the gate terminal of p-MBCFETs for a stress time up to 900 seconds to observe NBTI degradation, and stress voltages ranging from +2 to + 5V are applied to the gate terminal of n-MBCFETs for a stress time up to 900 seconds to observe PBTI degradation. NBTI degradation results in a notable V-th shift, ranging from 19.5mV to 31.6mV, attributed to a temporary trap charge, which is comparatively larger than PBTI. It exhibits a significant recovery effect over time, with a V-th shift due to a permanent trap charge ranging from 0.2mV to 0.6mV. In contrast, PBTI degradation induces a smaller V-th shift of about 4.4mV, with limited and prolonged recovery.