Analysis of the Electrical Characteristics for Compact SPICE Modelling of STT-MTJ Device with Physical Parameters Variation
Spin-Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) operates on the principle of magnetic anisotropy energy to retain information and magnetoresistance to retrieve information. STT-MRAM consists of an MTJ (Magnetic Tunnel Junction) and a transistor device. The MTJ comprises two lay...
| Published in: | 2024 IEEE INTERNATIONAL CONFERENCE ON SEMICONDUCTOR ELECTRONICS, ICSE |
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| Main Authors: | , , , , , , |
| Format: | Proceedings Paper |
| Language: | English |
| Published: |
IEEE
2024
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| Subjects: | |
| Online Access: | https://www-webofscience-com.uitm.idm.oclc.org/wos/woscc/full-record/WOS:001329134600002 |