Wide Bandgap SiC-Based Oxide Thickness Optimization by Computation and Simulation using Enhanced Electron Mobility with Regulated Gate Voltage Technique for High-Power 4H-SiC MOSFET

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Wide Bandgap SiC-Based Oxide Thickness Optimization by Computation and Simulation using Enhanced Electron Mobility with Regulated Gate Voltage Technique for High-Power 4H-SiC MOSFET

This work analyzed the interactions between gate oxide thickness (Tox), voltage dependence, and electron mobility (Emobility) in the inversion layer, which controls the electron movement properties of 4H-SiC/SiO2. This paper also presents a calculation of gate oxide thickness in correlation with gat...

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Bibliographic Details
Published in:	JOURNAL OF ENGINEERING AND TECHNOLOGICAL SCIENCES
Main Authors:	Poobalan, Banu; Hashim, Nuralia Syahida; Natarajan, Manikandan; Rahim, Alhan Farhanah Abd
Format:	Article
Language:	English
Published:	ITB JOURNAL PUBL 2024
Subjects:	Engineering
Online Access:	https://www-webofscience-com.uitm.idm.oclc.org/wos/woscc/full-record/WOS:001295659900005

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