Wide Bandgap SiC-Based Oxide Thickness Optimization by Computation and Simulation using Enhanced Electron Mobility with Regulated Gate Voltage Technique for High-Power 4H-SiC MOSFE...

by Poobalan B.; Hashim N.S.; Natarajan M.; Rahim A.F.A.
Published in Journal of Engineering and Technological Sciences (2024)

Wide Bandgap SiC-Based Oxide Thickness Optimization by Computation and Simulation using Enhanced Electron Mobility with Regulated Gate Voltage Technique for High-Power 4H-SiC MOSFE...

by Poobalan, Banu; Hashim, Nuralia Syahida; Natarajan, Manikandan; Rahim, Alhan Farhanah Abd
Published in JOURNAL OF ENGINEERING AND TECHNOLOGICAL SCIENCES (2024)

A Study on Electrical Performance of SiC-based Self-switching Diode (SSD) as a High Voltage High Power Device

by Sha'ari, N. Z. A. A.; Zakaria, N. F.; Kasjoo, S. R.; Norizan, M. N.; Mohamad, I. S.; Ahmad, M. F.; Poobalan, B.; Sabani, N.; Rahim, A. F. A.
Published in INTERNATIONAL JOURNAL OF NANOELECTRONICS AND MATERIALS (2023)

A Study on Electrical Performance of SiC-based Self-switching Diode (SSD) as a High Voltage High Power Device

by Sha’ari N.Z.A.A.; Zakaria N.F.; Kasjoo S.R.; Norizan M.N.; Mohamad I.S.; Ahmad M.F.; Rais S.A.A.; Poobalan B.; Sabani N.; Rahim A.F.A.
Published in International Journal of Nanoelectronics and Materials (2023)