Wide Bandgap SiC-Based Oxide Thickness Optimization by Computation and Simulation using Enhanced Electron Mobility with Regulated Gate Voltage Technique for High-Power 4H-SiC MOSFET
This work analyzed the interactions between gate oxide thickness (Tox), voltage dependence, and electron mobility (Emobility) in the inversion layer, which controls the electron movement properties of 4H-SiC/SiO2. This paper also presents a calculation of gate oxide thickness in correlation with gat...
| Published in: | JOURNAL OF ENGINEERING AND TECHNOLOGICAL SCIENCES |
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| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
| Published: |
ITB JOURNAL PUBL
2024
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| Subjects: | |
| Online Access: | https://www-webofscience-com.uitm.idm.oclc.org/wos/woscc/full-record/WOS:001295659900005 |