Analytical Modeling of Depletion-Mode MOSHEMT Device for High- Temperature Applications

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Analytical Modeling of Depletion-Mode MOSHEMT Device for High- Temperature Applications

An analytical model for depletion-mode MOSHEMTs for high-temperature applications is compared against the experimental GaN HEMT data of the AlGaN/GaN MOSHEMT for temperature dependence of 2DEG simulated at 75 degree celsius and 125 degree celsius. Both temperatures reduce the 2DEG density by 4 % in...

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Bibliographic Details
Published in:	IEEE ACCESS
Main Authors:	Islam, Naeemul; Packeer Mohamed, Mohamed Fauzi; Ahmad, Norhawati; Isa, Muammar Mohamad; Rahim, Alhan Farhanah Abd; Ahmeda, Khaled
Format:	Article
Language:	English
Published:	IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC 2024
Subjects:	Computer Science; Engineering; Telecommunications
Online Access:	https://www-webofscience-com.uitm.idm.oclc.org/wos/woscc/full-record/WOS:001184763900001

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