Analytical Modeling of Depletion-Mode MOSHEMT Device for High- Temperature Applications
An analytical model for depletion-mode MOSHEMTs for high-temperature applications is compared against the experimental GaN HEMT data of the AlGaN/GaN MOSHEMT for temperature dependence of 2DEG simulated at 75 degree celsius and 125 degree celsius. Both temperatures reduce the 2DEG density by 4 % in...
| Published in: | IEEE ACCESS |
|---|---|
| Main Authors: | , , , , , , |
| Format: | Article |
| Language: | English |
| Published: |
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
2024
|
| Subjects: | |
| Online Access: | https://www-webofscience-com.uitm.idm.oclc.org/wos/woscc/full-record/WOS:001184763900001 |