Impact of Nanowire Radius and Channel Thickness with High-k Gate Dielectric in GAA-JLT
As the transistor's size becomes smaller, degradation in the short-channel effects (SCEs) becomes more apparent. This leads to research work on multi-gate transistors such as the Fin-Field Effect Transistor (FinFET) and Gate-All-Around (GAA) transistor, where the 3D architecture have been shown...
| Published in: | INTERNATIONAL JOURNAL OF NANOELECTRONICS AND MATERIALS |
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| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
| Published: |
UNIMAP PRESS
2023
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| Subjects: | |
| Online Access: | https://www-webofscience-com.uitm.idm.oclc.org/wos/woscc/full-record/WOS:001141805800006 |