Enhanced properties of porous GaN prepared by UV assisted electrochemical etching
The structural and optical properties of porous GaN films on sapphire (0001) prepared by UV assisted electrochemical etching were reported in this study. SEM micrographs indicated that the shapes of the pores for both porous samples are nearly hexagonal. As compared to the as-grown GaN films, porous...
| الحاوية / القاعدة: | Advanced Materials Research |
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| المؤلف الرئيسي: | |
| التنسيق: | Conference paper |
| اللغة: | English |
| منشور في: |
2012
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| الوصول للمادة أونلاين: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-81855177306&doi=10.4028%2fwww.scientific.net%2fAMR.364.90&partnerID=40&md5=83bd4fd0b4ade062560df3b7c94f9a80 |