Enhanced properties of porous GaN prepared by UV assisted electrochemical etching
The structural and optical properties of porous GaN films on sapphire (0001) prepared by UV assisted electrochemical etching were reported in this study. SEM micrographs indicated that the shapes of the pores for both porous samples are nearly hexagonal. As compared to the as-grown GaN films, porous...
| 出版年: | Advanced Materials Research |
|---|---|
| 第一著者: | |
| フォーマット: | Conference paper |
| 言語: | English |
| 出版事項: |
2012
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| オンライン･アクセス: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-81855177306&doi=10.4028%2fwww.scientific.net%2fAMR.364.90&partnerID=40&md5=83bd4fd0b4ade062560df3b7c94f9a80 |