Hexagonal Enhanced Porous GaN with Delayed Integrated Pulse Electrochemical (iPEC) Etching

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Hexagonal Enhanced Porous GaN with Delayed Integrated Pulse Electrochemical (iPEC) Etching

This present study investigates the effect of time delay (Td) on the formation of porous GaN (P-GaN) using integrated pulse electrochemical (iPEC) etching. Porous GaN (P-GaN) was formed by etching an N-type GaN wafer with a 4% KOH electrolyte for 60 minutes under an ultraviolet (UV) lamp at a curren...

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Bibliographic Details
Published in:	International Journal of Nanoelectronics and Materials
Main Author:	Razali N.S.M.; Rahim A.F.A.; Hassan N.S.M.; Radzali R.; Mahmood A.; Sabki S.N.; Hamzah I.H.; Idris M.; Mohamed M.F.P.
Format:	Article
Language:	English
Published:	Universiti Malaysia Perlis 2024
Online Access:	https://www.scopus.com/inward/record.uri?eid=2-s2.0-85209783751&doi=10.58915%2fijneam.v17i4.1278&partnerID=40&md5=078951fd1a22a445b084278783536efb

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