Hexagonal Enhanced Porous GaN with Delayed Integrated Pulse Electrochemical (iPEC) Etching
This present study investigates the effect of time delay (Td) on the formation of porous GaN (P-GaN) using integrated pulse electrochemical (iPEC) etching. Porous GaN (P-GaN) was formed by etching an N-type GaN wafer with a 4% KOH electrolyte for 60 minutes under an ultraviolet (UV) lamp at a curren...
| Published in: | International Journal of Nanoelectronics and Materials |
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| Main Author: | |
| Format: | Article |
| Language: | English |
| Published: |
Universiti Malaysia Perlis
2024
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| Online Access: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85209783751&doi=10.58915%2fijneam.v17i4.1278&partnerID=40&md5=078951fd1a22a445b084278783536efb |