Analysis of the Electrical Characteristics for Compact SPICE Modelling of STT-MTJ Device with Physical Parameters Variation

Spin-Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) operates on the principle of magnetic anisotropy energy to retain information and magnetoresistance to retrieve information. STT-MRAM consists of an MTJ (Magnetic Tunnel Junction) and a transistor device. The MTJ comprises two lay...

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Bibliographic Details
Published in:IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
Main Author: Pai M.Y.X.; Alias N.E.; Tan M.L.P.; Hamzah A.; Wahab Y.A.; Muhamad M.
Format: Conference paper
Language:English
Published: Institute of Electrical and Electronics Engineers Inc. 2024
Online Access:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85206474160&doi=10.1109%2fICSE62991.2024.10681337&partnerID=40&md5=6c5af047a6a18674d0ec06e4fb579678

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