Analysis of the Electrical Characteristics for Compact SPICE Modelling of STT-MTJ Device with Physical Parameters Variation
Spin-Transfer Torque Magnetoresistive Random Access Memory (STT-MRAM) operates on the principle of magnetic anisotropy energy to retain information and magnetoresistance to retrieve information. STT-MRAM consists of an MTJ (Magnetic Tunnel Junction) and a transistor device. The MTJ comprises two lay...
| Published in: | IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE |
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| Main Author: | |
| Format: | Conference paper |
| Language: | English |
| Published: |
Institute of Electrical and Electronics Engineers Inc.
2024
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| Online Access: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85206474160&doi=10.1109%2fICSE62991.2024.10681337&partnerID=40&md5=6c5af047a6a18674d0ec06e4fb579678 |