Analysis of the influence of the traps on the AlGaN/GaN MOSHEMT characteristics for low leakage power devices

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Analysis of the influence of the traps on the AlGaN/GaN MOSHEMT characteristics for low leakage power devices

AlGaN/GaN, Metal Oxide Semiconductor High Electron Mobility Transistors (MOSHEMTs) are very attractive for high-power, high-frequency, and high-temperature applications with low gate leakage current. However, charge trapping at the insulator/AlGaN interface is believed to limit the performance of Al...

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Bibliographic Details
Published in:	International Journal of Nanotechnology
Main Author:	Islam N.; Baharin M.S.N.S.; Rahim A.F.A.; Khan M.F.A.J.; Ghazali N.A.; Bakar A.S.A.; Mohamed M.F.P.
Format:	Article
Language:	English
Published:	Inderscience Publishers 2024
Online Access:	https://www.scopus.com/inward/record.uri?eid=2-s2.0-85206174796&doi=10.1504%2fIJNT.2024.141758&partnerID=40&md5=897686c6bc0124b0ee8fe84eaa655008

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