Analysis of the influence of the traps on the AlGaN/GaN MOSHEMT characteristics for low leakage power devices

by Islam N.; Baharin M.S.N.S.; Rahim A.F.A.; Khan M.F.A.J.; Ghazali N.A.; Bakar A.S.A.; Mohamed M.F.P.
Published in International Journal of Nanotechnology (2024)