Analysis of the influence of the traps on the AlGaN/GaN MOSHEMT characteristics for low leakage power devices
AlGaN/GaN, Metal Oxide Semiconductor High Electron Mobility Transistors (MOSHEMTs) are very attractive for high-power, high-frequency, and high-temperature applications with low gate leakage current. However, charge trapping at the insulator/AlGaN interface is believed to limit the performance of Al...
| Published in: | International Journal of Nanotechnology |
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| Main Author: | |
| Format: | Article |
| Language: | English |
| Published: |
Inderscience Publishers
2024
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| Online Access: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85206174796&doi=10.1504%2fIJNT.2024.141758&partnerID=40&md5=897686c6bc0124b0ee8fe84eaa655008 |