Numerical performance analysis of In0.2Ga0.8N/p-Si based solar cell using PC1D simulation on influence of region thicknesses, doping concentration and temperature towards power conversion efficiency (PCE)
In this study, the indium gallium nitride (InGaN) with silicon (Si) p-n junction solar cells were optimized to achieve the highest conversion efficiency using PC1D numerical analysis software. Physical models such as Auger recombination with Fermi-Dirac statistics, Shockley-Read-Hall recombination,...
| Published in: | Journal of Optics (India) |
|---|---|
| Main Author: | |
| Format: | Article |
| Language: | English |
| Published: |
Springer
2024
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| Online Access: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85200974572&doi=10.1007%2fs12596-024-02119-y&partnerID=40&md5=4d9bda8197bddd91c73293d62b0ded8f |