Performance Analysis of JL-FinFET with Varied Non-Uniform Doping Concentrations, Fin Height and Fin Width using Device Simulator
With the growth of the MOSFET technology, the size of the transistor becomes smaller which can lead to Short-Channel Effects (SCEs). In order to address the SCEs, multi-gate transistor such as Fin Field-Effect Transistor (FinFET) has been invented. Meanwhile, it is found that the conventional transi...
| Published in: | International Journal of Nanoelectronics and Materials |
|---|---|
| Main Author: | |
| Format: | Article |
| Language: | English |
| Published: |
Universiti Malaysia Perlis
2023
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| Online Access: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85181658397&partnerID=40&md5=d298d69c7397d51c1441bec1e842fa6c |