NBTI Defects Characterization Using Energy Profiling Simulation Technique

NBTI Defects Characterization Using Energy Profiling Simulation Technique

A numerical simulation framework to simulate the positive charges based on location of energy levels is conducted in this work. This framework utilizes an energy profiling approach, where the behavior of hole traps under stress conditions is studied. In this process, a recovery voltage is applied to...

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Published in:Proceedings - 2023 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2023
Main Author: Hussin H.; Wan S.F.; Soin N.; Wahab Y.A.; Muhamad M.; Alias N.E.
Format: Conference paper
Language:English
Published: Institute of Electrical and Electronics Engineers Inc. 2023
Online Access:https://www.scopus.com/inward/record.uri?eid=2-s2.0-85179837175&doi=10.1109%2fRSM59033.2023.10326770&partnerID=40&md5=12d3a1c41bfce0ea91dedd8aca95b22a
id 2-s2.0-85179837175
spelling 2-s2.0-85179837175
Hussin H.; Wan S.F.; Soin N.; Wahab Y.A.; Muhamad M.; Alias N.E.
NBTI Defects Characterization Using Energy Profiling Simulation Technique
2023
Proceedings - 2023 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2023


10.1109/RSM59033.2023.10326770
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85179837175&doi=10.1109%2fRSM59033.2023.10326770&partnerID=40&md5=12d3a1c41bfce0ea91dedd8aca95b22a
A numerical simulation framework to simulate the positive charges based on location of energy levels is conducted in this work. This framework utilizes an energy profiling approach, where the behavior of hole traps under stress conditions is studied. In this process, a recovery voltage is applied to facilitate charged hole traps release. The recovery voltage is incrementally increased in the positive direction, to move the Fermi level thus creating the desired energy spectrum. Experimental data suggests that the defect charges responsible for this phenomenon arise from various sources and simulation results able to probe these types of charges. © 2023 IEEE.
Institute of Electrical and Electronics Engineers Inc.

English
Conference paper
author Hussin H.; Wan S.F.; Soin N.; Wahab Y.A.; Muhamad M.; Alias N.E.
spellingShingle Hussin H.; Wan S.F.; Soin N.; Wahab Y.A.; Muhamad M.; Alias N.E.
NBTI Defects Characterization Using Energy Profiling Simulation Technique
author_facet Hussin H.; Wan S.F.; Soin N.; Wahab Y.A.; Muhamad M.; Alias N.E.
author_sort Hussin H.; Wan S.F.; Soin N.; Wahab Y.A.; Muhamad M.; Alias N.E.
title NBTI Defects Characterization Using Energy Profiling Simulation Technique
title_short NBTI Defects Characterization Using Energy Profiling Simulation Technique
title_full NBTI Defects Characterization Using Energy Profiling Simulation Technique
title_fullStr NBTI Defects Characterization Using Energy Profiling Simulation Technique
title_full_unstemmed NBTI Defects Characterization Using Energy Profiling Simulation Technique
title_sort NBTI Defects Characterization Using Energy Profiling Simulation Technique
publishDate 2023
container_title Proceedings - 2023 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2023
container_volume
container_issue
doi_str_mv 10.1109/RSM59033.2023.10326770
url https://www.scopus.com/inward/record.uri?eid=2-s2.0-85179837175&doi=10.1109%2fRSM59033.2023.10326770&partnerID=40&md5=12d3a1c41bfce0ea91dedd8aca95b22a
description A numerical simulation framework to simulate the positive charges based on location of energy levels is conducted in this work. This framework utilizes an energy profiling approach, where the behavior of hole traps under stress conditions is studied. In this process, a recovery voltage is applied to facilitate charged hole traps release. The recovery voltage is incrementally increased in the positive direction, to move the Fermi level thus creating the desired energy spectrum. Experimental data suggests that the defect charges responsible for this phenomenon arise from various sources and simulation results able to probe these types of charges. © 2023 IEEE.
publisher Institute of Electrical and Electronics Engineers Inc.
issn
language English
format Conference paper
accesstype
record_format scopus
collection Scopus
_version_ 1809677587570491392

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