Gallium Nitride Depth Porosity Using Image Processing Method

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Gallium Nitride Depth Porosity Using Image Processing Method

Porous Gallium Nitride (GaN) structure is commonly prepared by using direct current photo-assisted electrochemical etching (DC-PECE) technique to generate porous structure. However, to reach a generalized pores depth porosity measured using conventional methods is impossible due to the complex and v...

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Bibliographic Details
Published in:	13th IEEE Symposium on Computer Applications and Industrial Electronics, ISCAIE 2023
Main Author:	Fauzi N.A.; Isa I.S.; Isa S.M.; Manaf A.A.; Rahim A.F.A.; Mahmood A.; Noordin I.R.M.
Format:	Conference paper
Language:	English
Published:	Institute of Electrical and Electronics Engineers Inc. 2023
Online Access:	https://www.scopus.com/inward/record.uri?eid=2-s2.0-85165208702&doi=10.1109%2fISCAIE57739.2023.10165126&partnerID=40&md5=b2cdd7a3ad40d0b8fbc40ba9bd3ba878

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