Gallium Nitride Depth Porosity Using Image Processing Method
Porous Gallium Nitride (GaN) structure is commonly prepared by using direct current photo-assisted electrochemical etching (DC-PECE) technique to generate porous structure. However, to reach a generalized pores depth porosity measured using conventional methods is impossible due to the complex and v...
| Published in: | 13th IEEE Symposium on Computer Applications and Industrial Electronics, ISCAIE 2023 |
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| Main Author: | |
| Format: | Conference paper |
| Language: | English |
| Published: |
Institute of Electrical and Electronics Engineers Inc.
2023
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| Online Access: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85165208702&doi=10.1109%2fISCAIE57739.2023.10165126&partnerID=40&md5=b2cdd7a3ad40d0b8fbc40ba9bd3ba878 |