Study of Porous III-V Surface Structure Via Etching Process: Effect of Pore Depth

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Study of Porous III-V Surface Structure Via Etching Process: Effect of Pore Depth

In this project, the surface structure of III-V semiconductor, GaAs, was altered to enhance the optical and electronic properties of the semiconductor. This project involved the designing and fabrication of non-porous and porous GaAs structures using SILVACO TCAD tools. The porous GaAs with differen...

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Bibliographic Details
Published in:	Key Engineering Materials
Main Author:	Ramle M.R.; Radzali R.; Rahim A.F.A.; Mahmood A.; Bakar A.A.; Daud A.N.M.; Abdullah M.H.
Format:	Book chapter
Language:	English
Published:	Trans Tech Publications Ltd 2023
Online Access:	https://www.scopus.com/inward/record.uri?eid=2-s2.0-85161346437&doi=10.4028%2fp-v731ho&partnerID=40&md5=3aab014aa23934c47b18112c4ca8ad06

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