Study of Porous III-V Surface Structure Via Etching Process: Effect of Pore Depth
In this project, the surface structure of III-V semiconductor, GaAs, was altered to enhance the optical and electronic properties of the semiconductor. This project involved the designing and fabrication of non-porous and porous GaAs structures using SILVACO TCAD tools. The porous GaAs with differen...
| Published in: | Key Engineering Materials |
|---|---|
| Main Author: | |
| Format: | Book chapter |
| Language: | English |
| Published: |
Trans Tech Publications Ltd
2023
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| Online Access: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85161346437&doi=10.4028%2fp-v731ho&partnerID=40&md5=3aab014aa23934c47b18112c4ca8ad06 |