2D Physical Modelling of Double δ-Doped pHEMT with Tensile InAlAs Barrier and Compressive InGaAs Channel

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2D Physical Modelling of Double δ-Doped pHEMT with Tensile InAlAs Barrier and Compressive InGaAs Channel

This study focuses on the optimization of fabricated 1 µm gate length depletion-mode double δ-doped In0.3Al0.7As/ In0.7Ga0.3As/InP depletion-mode pHEMT using SILVACO ATLAS TCAD simulator. Physical modelling of the pHEMT devices is required to further understand the effect of the parameters and struc...

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Bibliographic Details
Published in:	Lecture Notes in Electrical Engineering
Main Author:	Ikhwan N.I.M.; Mohamed M.F.P.; Khan M.F.A.J.; Ghazali N.A.; Manaf A.A.; Baharin M.S.N.S.; Hairi M.H.; Rahim A.F.A.
Format:	Conference paper
Language:	English
Published:	Springer Science and Business Media Deutschland GmbH 2022
Online Access:	https://www.scopus.com/inward/record.uri?eid=2-s2.0-85125255123&doi=10.1007%2f978-981-16-8129-5_135&partnerID=40&md5=9c8d739b17f1fd8cac9d0fd2322c0d24

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