2D Physical Modelling of Double δ-Doped pHEMT with Tensile InAlAs Barrier and Compressive InGaAs Channel
This study focuses on the optimization of fabricated 1 µm gate length depletion-mode double δ-doped In0.3Al0.7As/ In0.7Ga0.3As/InP depletion-mode pHEMT using SILVACO ATLAS TCAD simulator. Physical modelling of the pHEMT devices is required to further understand the effect of the parameters and struc...
| Published in: | Lecture Notes in Electrical Engineering |
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| Main Author: | |
| Format: | Conference paper |
| Language: | English |
| Published: |
Springer Science and Business Media Deutschland GmbH
2022
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| Online Access: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85125255123&doi=10.1007%2f978-981-16-8129-5_135&partnerID=40&md5=9c8d739b17f1fd8cac9d0fd2322c0d24 |