2D Physical Modelling of Double δ-Doped pHEMT with Tensile InAlAs Barrier and Compressive InGaAs Channel

• Published in: Lecture Notes in Electrical Engineering
• Main Author: Ikhwan N.I.M.; Mohamed M.F.P.; Khan M.F.A.J.; Ghazali N.A.; Manaf A.A.; Baharin M.S.N.S.; Hairi M.H.; Rahim A.F.A.
• Format: Conference paper
• Language: English
• Published: Springer Science and Business Media Deutschland GmbH 2022
• Online Access: https://www.scopus.com/inward/record.uri?eid=2-s2.0-85125255123&doi=10.1007%2f978-981-16-8129-5_135&partnerID=40&md5=9c8d739b17f1fd8cac9d0fd2322c0d24
• ISSN: 18761100
• DOI: 10.1007/978-981-16-8129-5_135

This study focuses on the optimization of fabricated 1 µm gate length depletion-mode double δ-doped In0.3Al0.7As/ In0.7Ga0.3As/InP depletion-mode pHEMT using SILVACO ATLAS TCAD simulator. Physical modelling of the pHEMT devices is required to further understand the effect of the parameters and structures on the device performance, which incorporated a highly tensile In0.3Al0.7As barrier and compressive In0.7Ga0.3As channel. The work starts with developing a base model from the fabricated device DC characteristic such as I-V curves by inverse modelling and matching simulated results with measured results. Finally, to study the effects of channel layer thicknesses and gate length variations, the models are simulated, and the corresponding I-V curves are compared to the base model. Hence, by increasing the channel layer thickness by 15% from its original thickness and reducing the 1 um gate length by 60%, the channel layer and gate length were successfully simulated and agreed well with the measured results. © 2022, The Author(s), under exclusive license to Springer Nature Singapore Pte Ltd.