Ultrafast laser plasma doping of Er3+ in Si3N4-on-silicon

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Ultrafast laser plasma doping of Er3+ in Si3N4-on-silicon

An ultrafast laser plasma doping (ULPD) technique is used to dope Er3+ into silicon nitride (Si3N4)-on-silicon substrate. An adjustable refractive index (1.9-2.9) makes silicon nitride a highly suitable candidate for erbium-doped waveguide amplifier (EDWA) applications. The resultant layers consist...

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Bibliographic Details
Published in:	Journal of Optoelectronics and Advanced Materials
Main Author:	Kamil S.A.; Chandrappan J.; Krauss T.F.; Jose G.
Format:	Article
Language:	English
Published:	National Institute of Optoelectronics 2019
Online Access:	https://www.scopus.com/inward/record.uri?eid=2-s2.0-85081298457&partnerID=40&md5=b3651eefd33c42d26682825ae79b8511

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