Ultrafast laser plasma doping of Er3+ in Si3N4-on-silicon
An ultrafast laser plasma doping (ULPD) technique is used to dope Er3+ into silicon nitride (Si3N4)-on-silicon substrate. An adjustable refractive index (1.9-2.9) makes silicon nitride a highly suitable candidate for erbium-doped waveguide amplifier (EDWA) applications. The resultant layers consist...
| 出版年: | Journal of Optoelectronics and Advanced Materials |
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| 第一著者: | |
| フォーマット: | 論文 |
| 言語: | English |
| 出版事項: |
National Institute of Optoelectronics
2019
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| オンライン･アクセス: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85081298457&partnerID=40&md5=b3651eefd33c42d26682825ae79b8511 |