Investigation on the effect of delay time during pulse chemical etching of porous silicon formation
A set of porous silicon (PS) layers was produced by the pulse current (PC) etching technique using a solution of HF:C2H6O in a composition ratio of 1:4 with delay time varying from 0 to 4 minutes. The set was compared with the one porous silicon sample that was etched by using the conventional direc...
| Published in: | Acta Physica Polonica A |
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| Main Author: | |
| Format: | Article |
| Language: | English |
| Published: |
Polish Academy of Sciences
2019
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| Online Access: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-85071160457&doi=10.12693%2fAPhysPolA.135.873&partnerID=40&md5=a7ba7a608e066bfd33e34bf6f916d452 |