Changes in electrical properties of MOS transistor induced by single 14 MeV neutron

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Changes in electrical properties of MOS transistor induced by single 14 MeV neutron

Neutron radiation causes significant changes in the characteristics of MOS devices by the creation of oxide-trapped charge and interface traps. The degradation of the current gain of the GF4936 dual n-channel depletion mode MOS transistor, caused by neutron displacement defects, was measured using i...

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Bibliographic Details
Published in:	AIP Conference Proceedings
Main Author:	Haider F.A.; Chee F.P.; Abu Hassan H.; Saafie S.; Afishah A.
Format:	Conference paper
Language:	English
Published:	American Institute of Physics Inc. 2016
Online Access:	https://www.scopus.com/inward/record.uri?eid=2-s2.0-84984585634&doi=10.1063%2f1.4940111&partnerID=40&md5=e6e0f88a43231db15eb0842bf3f766b9

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