Changes in electrical properties of MOS transistor induced by single 14 MeV neutron
Neutron radiation causes significant changes in the characteristics of MOS devices by the creation of oxide-trapped charge and interface traps. The degradation of the current gain of the GF4936 dual n-channel depletion mode MOS transistor, caused by neutron displacement defects, was measured using i...
| Published in: | AIP Conference Proceedings |
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| Main Author: | |
| Format: | Conference paper |
| Language: | English |
| Published: |
American Institute of Physics Inc.
2016
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| Online Access: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-84984585634&doi=10.1063%2f1.4940111&partnerID=40&md5=e6e0f88a43231db15eb0842bf3f766b9 |