Changes in electrical properties of MOS transistor induced by single 14 MeV neutron

• Published in: AIP Conference Proceedings
• Main Author: Haider F.A.; Chee F.P.; Abu Hassan H.; Saafie S.; Afishah A.
• Format: Conference paper
• Language: English
• Published: American Institute of Physics Inc. 2016
• Online Access: https://www.scopus.com/inward/record.uri?eid=2-s2.0-84984585634&doi=10.1063%2f1.4940111&partnerID=40&md5=e6e0f88a43231db15eb0842bf3f766b9

Neutron radiation causes significant changes in the characteristics of MOS devices by the creation of oxide-trapped charge and interface traps. The degradation of the current gain of the GF4936 dual n-channel depletion mode MOS transistor, caused by neutron displacement defects, was measured using in-situ method during neutron irradiation. The average degradation of the gain current is 35 mA at maximum fluence of 2.0 × 1010 n/cm2 while with an average of 25 mA at minimum fluence of 5.0 × 108 n/cm2. The change in channel current gain increased proportionally with neutron fluence, meanwhile drain saturation current decreased proportionally with the neutron fluence. © 2016 AIP Publishing LLC.