Changes in electrical properties of MOS transistor induced by single 14 MeV neutron
Neutron radiation causes significant changes in the characteristics of MOS devices by the creation of oxide-trapped charge and interface traps. The degradation of the current gain of the GF4936 dual n-channel depletion mode MOS transistor, caused by neutron displacement defects, was measured using i...
| Published in: | AIP Conference Proceedings |
|---|---|
| Main Author: | |
| Format: | Conference paper |
| Language: | English |
| Published: |
American Institute of Physics Inc.
2016
|
| Online Access: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-84984585634&doi=10.1063%2f1.4940111&partnerID=40&md5=e6e0f88a43231db15eb0842bf3f766b9 |
| Summary: | Neutron radiation causes significant changes in the characteristics of MOS devices by the creation of oxide-trapped charge and interface traps. The degradation of the current gain of the GF4936 dual n-channel depletion mode MOS transistor, caused by neutron displacement defects, was measured using in-situ method during neutron irradiation. The average degradation of the gain current is 35 mA at maximum fluence of 2.0 × 1010 n/cm2 while with an average of 25 mA at minimum fluence of 5.0 × 108 n/cm2. The change in channel current gain increased proportionally with neutron fluence, meanwhile drain saturation current decreased proportionally with the neutron fluence. © 2016 AIP Publishing LLC. |
|---|---|
| ISSN: | 0094243X |
| DOI: | 10.1063/1.4940111 |