Boron-doped amorphous carbon film grown by bias assisted pyrolysis chemical vapor deposition

• Published in: IEICE Electronics Express
• Main Author: Annuar I.; Rouhi J.; Rusop M.
• Format: Article
• Language: English
• Published: Institute of Electronics Information Communication Engineers 2015
• Online Access: https://www.scopus.com/inward/record.uri?eid=2-s2.0-84943819813&doi=10.1587%2felex.11.20140937&partnerID=40&md5=47eb7a4aa5b37131df572ae1daf4f2ff
• ISSN: 13492543
• DOI: 10.1587/elex.11.20140937

Boron-doped amorphous carbon (a-C:B) films were successfully synthesized via a bias-assisted pyrolysis-chemical vapor deposition (CVD). The effect of substrate bias on the thickness, surface morphology, electrical properties of a-C:B film were investigated. The AFM measurements and conductivity result show the surface roughness and resistivity of a-C:B films decreases with increasing substrate bias from 0 to −20 V. The fabricated films were evaluated for use in photovoltaic solar cells. The fabricated solar cell with the configuration of Au/p-C:B/n-Si/Au achieved conversion efficiency (η) of 1.431% at applied bias voltage of −20 V. This result showed the successful interstitial doping of boron in the amorphous carbon films deposited by this method. © IEICE 2015.