Formation of uniform germanium islands on silicon substrate using nickel as catalyst by thermal evaporation method
Uniform germanium islands (GIs) were grown on Si (100) using a nickel layer as catalyst through the physical vapor deposition of germanium (Ge) powder at 1000 °C at different deposition times. Prior to the deposition of Ge layer, nickel (Ni) catalyst was deposited on silicon substrates via radio fre...
| الحاوية / القاعدة: | Acta Physica Polonica A |
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| المؤلف الرئيسي: | |
| التنسيق: | Conference paper |
| اللغة: | English |
| منشور في: |
Polska Akademia Nauk
2015
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| الوصول للمادة أونلاين: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-84938841128&doi=10.12693%2fAPhysPolA.127.1068&partnerID=40&md5=43f60c622b7d3f35242dbe843e9500d9 |