Fabrication and characterization of camphor-based amorphous carbon thin films

• Published in: Procedia Engineering
• Main Author: Fadzilah A.N.; Dayana K.; Rusop M.
• Format: Conference paper
• Language: English
• Published: Elsevier Ltd 2013
• Online Access: https://www.scopus.com/inward/record.uri?eid=2-s2.0-84891704857&doi=10.1016%2fj.proeng.2013.03.188&partnerID=40&md5=1abf01b4a3b0e78db52dd540afc2f337

Pure amorphous carbon (a-C) and nitrogen doped amorphous carbon (a-C: N) thin films were prepared using Thermal Chemical Vapor Deposition (CVD) with deposition temperature ranging from 500°C to 650°C using camphor (C 10H16O) as a precursor from natural source. The physical and optical properties of deposited a-C and a-C: N thin films were characterized by UV-Vis-NIR spectroscope and Raman spectroscope. The presence of 2 peaks known as Raman D peaks and Raman G peaks ensure the amorphous structure of carbon (C). Raman ID/IG ratio for both pure and nitrogen doped a-C as deposition temperature increase indicates more graphitic structure in high temperature of a-C and a-C: N. Highest transmittance indicated at thin film with lowest deposition temperature (500°C) and vice versa. At visible range (390 nm to 790 nm) the transmittance exhibit high transmittance of above 80% at low temperature (500 and 550). However, at high temperature (600 and 650) transmittance is low (30%-70%). The absorption coefficient, for both a-C and a-C: N is reported to be ∼x105 cm-1. From Tauc's plot, optical band gap (Eg) was determined and Eg found to decrease as deposition temperature increased from 0.2 to 0.9 eV for pure a-C and 0.2 to 0.75 eV for nitrogen doped a-C. © 2013 The author.