| Summary: | Nickel (Ni) / indium tin oxide (ITO) nanostructures were deposited on glass and silicon (111) substrates by RF magnetron sputtering using a nickel target and ITO (In-Sn, 90%-10%) targets. The post-deposition annealing has been performed for Ni/ITO films in air and the effect of annealing temperature on the electrical, optical and structural properties on ITO films was studied. We found the appearance of (411) and (622) peaks in addition to (400) and (222) major peaks, which indicates an improvement of the film crystallinity at high annealing temperature of 650°C. The samples show higher transmittance of more than 90% at 460 nm after annealing. In addition, increasing the annealing temperatures also improve the film electrical properties. The resistivity decreases to 6.67×10-6 Ωcm when annealed at 500°C as opposed to 6.75×10-5 Ωcm in as-deposited film. © (2014) Trans Tech Publications, Switzerland.
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