Crystallization of electrodeposited germanium thin film on silicon (100)
We report the crystallization of electrodeposited germanium (Ge) thin films on n-silicon (Si) (100) by rapid melting process. The electrodeposition was carried out in germanium (IV) chloride: propylene glycol (GeCl4:C3H8O2) electrolyte with constant current of 50 mA for 30 min. The measured Raman sp...
| Published in: | Materials |
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| Main Author: | |
| Format: | Article |
| Language: | English |
| Published: |
2013
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| Online Access: | https://www.scopus.com/inward/record.uri?eid=2-s2.0-84888805737&doi=10.3390%2fma6115047&partnerID=40&md5=668850de4b41a95400dec069a74e35f8 |