A Novel AC technique for high quality porous GaN

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A Novel AC technique for high quality porous GaN

In this paper, we report the formation of porous GaN films under a novel alternatingcurrent (sine-wave a.c. (50 Hz)) photo-assisted electrochemical etching (ACPEC) conditions. The ac formed porous GaN with excellent structural and optical properties. Field emission scanning electron microscope (FESE...

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Bibliographic Details
Published in:	International Journal of Electrochemical Science
Main Author:	Mahmood A.; Ahmed N.M.; Yusof Y.; Kwong Y.F.; Siang C.L.; Abd H.R.; Hassan Z.
Format:	Article
Language:	English
Published:	2013
Online Access:	https://www.scopus.com/inward/record.uri?eid=2-s2.0-84876074044&partnerID=40&md5=aba596c3126191a8de7de61a23e80ab7

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